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GP1200FSM18
GP1200FSM18
Hi-Reliability Single Switch IGBT Module
DS5410-1.2 January 2001
FEATURES
s s s s
High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates 1200A Per Module
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
1800V 3.5V 1200A 2400A
APPLICATIONS
s s s s
External connection C1 Aux C C2
High Reliability Inverters Motor Controllers Traction Drives Resonant Converters
G
The Powerline range of high power modules includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP1200FSM18 is a single switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. This device is optimised for traction drives and other applications requiring high thermal cycling capability or very high reliability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety.
Aux E
E1
E2
External connection
Fig. 1 Single switch circuit diagram
Aux C Aux E
E1
C1
ORDERING INFORMATION
Order As: GP1200FSM18 Note: When ordering, please use the whole part number.
G E2 C2
Outline type code: F (See package details for further information) Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP1200FSM18
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax Visol Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation Isolation voltage Tcase = 65C for Tj = 125C 1ms, Tcase = 115C Tcase = 25C, Tj = 150C Commoned terminals to base plate. AC RMS, 1 min, 50Hz VGE = 0V Test Conditions Max. 1800 20 1200 2400 10.4 4000 Units V V A A kW V
THERMAL AND MECHANICAL RATINGS
Symbol Rth(j-c) Parameter Thermal resistance - transistor Test Conditions Continuous dissipation junction to case Rth(j-c) Thermal resistance - diode Continuous dissipation junction to case Rth(c-h) Thermal resistance - case to heatsink (per module) Mounting torque 5Nm (with mounting grease) Tj Junction temperature Transistor Diode Tstg Storage temperature range Screw torque Mounting - M6 Electrical connections - M4 Electrical connections - M8 -40 150 125 125 5 2 10 C C C Nm Nm Nm 8 C/kW 30 C/kW Min. Max. 12 Units C/kW
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP1200FSM18
ELECTRICAL CHARACTERISTICS
Tcase = 25C unless stated otherwise. Symbol ICES Parameter Collector cut-off current Test Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tcase = 125C IGES VGE(TH) VCE(sat) Gate leakage current Gate threshold voltage Collector-emitter saturation voltage VGE = 20V, VCE = 0V IC = 60mA, VGE = VCE VGE = 15V, IC = 1200A VGE = 15V, IC = 1200A, Tcase = 125C IF IFM VF Diode forward current Diode maximum forward current Diode forward voltage DC tp = 1ms IF = 1200A IF = 1200A, Tcase = 125C Cies LM Input capacitance Module inductance VCE = 25V, VGE = 0V, f = 1MHz Min. 4.5 Typ. 5.5 3.5 4.3 2.2 2.3 135 20 Max. 1 25 4 6.5 4 5 1200 2400 2.5 2.6 Units mA mA A V V V A A V V nF nH
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP1200FSM18
ELECTRICAL CHARACTERISTICS
Tcase = 25C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Irr EREC Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge Diode reverse current Diode reverse recovery energy IF = 1200A, VR = 50% VCES, dIF/dt = 4500A/s Test Conditions IC = 1200A VGE = 15V VCE = 900V RG(ON) = RG(OFF) = 2.2 L ~ 50nH Min. Typ. 1050 130 550 300 250 450 250 500 180 Max. 1250 200 700 400 400 650 350 Units ns ns mJ ns ns mJ C A mJ
Tcase = 125C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Irr EREC Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge Diode reverse current Diode reverse recovery energy IF = 1200A, VR = 50% VCES, dIF/dt = 4000A/s Test Conditions IC = 1200A VGE = 15V VCE = 900V RG(ON) = RG(OFF) = 2.2 L ~ 50nH Min. Typ. 1150 150 650 400 300 650 425 600 250 Max. 1350 300 850 550 450 800 550 Units ns ns mJ ns ns mJ C A mJ
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP1200FSM18
TYPICAL CHARACTERISTICS
Vge = 20/15/12V 2400 Common emitter 2200 Tcase = 25C 2000 1800
Collector current, Ic - (A)
Vge = 20/15/12V 2400 Common emitter 2200 Tcase = 125C 2000
Vge = 10V
Collector current, IC - (A)
1800 1600 1400 1200 1000 800 600 400 200
Vge = 10V
1600 1400 1200 1000 800 600 400 200 0 0 1.0 2.0 3.0 4.0 5.0 Collector-emitter voltage, Vce - (V) 6.0 7.0
0 0
1.0
2.0 3.0 4.0 5.0 6.0 7.0 8.0 Collector-emitter voltage, Vce - (V)
9.0 10.0
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
1.0 0.9 0.8 0.7
Energy - (J)
2.00
Tcase = 125C VGE = 15V VCE = 900V RG = 2.2 L = 50nH
1.75 1.50 1.25 1.00 0.75
Tcase = 125C VGE = 15V VCE = 900V IC = 1200A L = 50nH
EON
Energy - (J)
0.6 0.5 0.4 0.3 0.2 0.1 0 0 EREC EOFF EON
EOFF
0.50 0.25 0 0
EREC
200
600 400 800 Collector current, IC - (A)
1000
1200
1
2
4 3 5 6 7 Gate resistance, RG - (Ohms)
8
9
10
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typicalswitching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP1200FSM18
2400 2200 2000 1800
Foward current, IF - (A)
3000
Tj = 25C
2500
1600 1400 Tj = 125C
Collector current, IC - (A)
2000
1200 1000 800 600 400 200 0 0 0.5 2.0 1.0 1.5 2.5 Foward voltage, VF - (V) 3.0 3.5
1500
1000 Tcase = 125C 500 Vge = 15V Rg(off) = 2.2 0 0
1200 400 800 1600 Collector-emitter voltage, Vce - (V)
2000
Fig. 7 Diode typical forward characteristics
Fig. 8 Reverse bias safe operating area
10000
100
Transient thermal impedance, Zth(j-c) - (C/kW)
Diode
1000 Collector current, IC - (A) tp = 50s IC max (DC) 100 tp = 100s
10
Transistor
tp = 1ms 10
1
1 1 10 100 1000 10000 Collector emitter voltage, Vce - (V)
0.1 0.001
0.01
0.1 Pulse width, tp - (s)
1
10
Fig. 9 Forward bias safe operating area
Fig. 10 Transient thermal impedance
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP1200FSM18
PACKAGE DETAILS
For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
62 15 5 15
62
6 E1 Aux C
16 2.5
C1
57
Aux E
18.5
E2
C2
14.5 11 6x M4
35
20 4x M8
38 28
5 140
Nominal weight: 1050g Module outline type code: F
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
31.5
43.3 57 65
G
18
6x O7
65
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GP1200FSM18
ASSOCIATED PUBLICATIONS
Title Electrostatic handling precautions An introduction to IGBTs IGBT ratings and characteristics Heatsink requirements for IGBT modules Calculating the junction temperature of power semiconductors Gate drive considerations to maximise IGBT efficiency Parallel operation of IGBTs - punch through vs non-punch through characteristics Guidance notes for formulating technical enquiries Principle of rating parallel connected IGBT modules Short circuit withstand capability in IGBTs Driving Dynex Semincoductor IGBT modules with Concept gate drivers Application Note Number AN4502 AN4503 AN4504 AN4505 AN4506 AN4507 AN4508 AN4869 AN5000 AN5167 AN5384
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office.
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP1200FSM18
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontarion, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2001 Publication No. DS5410-1 Issue No. 1.2 January 2001 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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